EPITAXIAL INDIUM ARSENIDE BY VACUUM EVAPORATION

[1] BROOKS H, 1955, ADVANCES ELECTRONICS, V7

[2] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &

[3] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279

[4] GUNTHER KG, 1966, THIN FILMS PHYSICAL

[5] ELECTRICAL PROPERTIES OF THIN-FILM SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (02) : 143 - 151

[6] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[7] HONIG E, 1957, RCA REV, V18, P195

[8] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL FILMS OF SILICON ON SAPPHIRE FORMED BY VACUUM EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5310 - &

[9] TEXTURED INDIUM ARSENIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2188 - &

[10] MARAIS M, 1964, ONDE ELECTRIQUE, V44, P1005

[1] BROOKS H, 1955, ADVANCES ELECTRONICS, V7

[2] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &

[3] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279

[4] GUNTHER KG, 1966, THIN FILMS PHYSICAL

[5] ELECTRICAL PROPERTIES OF THIN-FILM SEMICONDUCTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (02) : 143 - 151

[6] Hilsum C., 1961, SEMICONDUCTING 3 5 C

[7] HONIG E, 1957, RCA REV, V18, P195

[8] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL FILMS OF SILICON ON SAPPHIRE FORMED BY VACUUM EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5310 - &

[9] TEXTURED INDIUM ARSENIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2188 - &

[10] MARAIS M, 1964, ONDE ELECTRIQUE, V44, P1005