ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL FILMS OF SILICON ON SAPPHIRE FORMED BY VACUUM EVAPORATION

被引：14

作者：

ITOH, T

HASEGAWA, S

KAMINAKA, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 11期

关键词：

D O I：

10.1063/1.1655959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5310 / &

共 15 条

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[7] EPITAXIAL FILMS OF SILICON ON SAPPHIRE FORMED BY VACUUM EVAPORATION AND THEIR ELECTRICAL PROPERTIES [J].

ITOH, T ;

HASEGAWA, S ;

WATANABE, H .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2969-&

[8] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1349-&

[9]

MANASEVIT HM, 1966, T METALL SOC AIME, V236, P275

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