EPITAXIAL FILMS OF SILICON ON SAPPHIRE FORMED BY VACUUM EVAPORATION AND THEIR ELECTRICAL PROPERTIES

被引：9

作者：

ITOH, T

HASEGAWA, S

WATANABE, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.1656708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2969 / &

共 11 条

[1] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J].

BICKNELL, RW ;

JOYCE, BA ;

NEAVE, JH ;

SMITH, GV .

PHILOSOPHICAL MAGAZINE, 1966, 14 (127) :31-&

[2] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

DUMIN, DJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1909-&

[3] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].

LUDWIG, GW ;

WATTERS, RL .

PHYSICAL REVIEW, 1956, 101 (06) :1699-1701

[4] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1349-&

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[6]

NABER CT, 1968, T METALL SOC AIME, V242, P470

[7] ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].

PEARSON, GL ;

BARDEEN, J .

PHYSICAL REVIEW, 1949, 75 (05) :865-883

[8] STRUCTURE CONDUCTIVITY AND HALL EFFECT OF ELECTRON BOMBARDMENT EVAPORATED SILICON FILMS ON SAPPHIRE [J].

SALAMA, CAT ;

TUCKER, TW ;

YOUNG, L .

SOLID-STATE ELECTRONICS, 1967, 10 (04) :339-&

[9]

UNVALA BA, 1963, LE VIDE, V104, P109

[10]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

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