MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSPORT-PROPERTIES OF INAS EPILAYERS

被引：30

作者：

KALEM, S ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3097 / 3103

页数：7

共 47 条

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