Dynamical fluctuation and surface phase transition at the Sn/Ge(111) √3 x √3R30°-α interface

被引：6

作者：

Avila, J ^{[1
]}

Huttel, Y

Le Lay, G

Asensio, MC

机构：

[1] CSIC, ICMM, Madrid 28049, Spain

[2] Univ Paris Sud, LURE, F-91405 Orsay, France

[3] CNRS, CRMC2, F-13288 Marseille, France

[4] Univ Aix Marseille 1, UFR SM, F-13003 Marseille, France

来源：

APPLIED SURFACE SCIENCE | 2000年 / 162卷

关键词：

photoemission; Sn/Ge(111); Fermi surface; CDW; fluctuation;

D O I：

10.1016/S0169-4332(00)00169-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The root 3 x root 3R30 degrees-alpha surface phase of Sn/Ge(lll) transforms reversibly upon cooling into a 3 x 3 phase. Using high-resolution photoemission, the effect of this transition on the Sn core-level and the Fermi surface (FS) has been determined. The topology of the FS show a Fermi momentum along T (K) over bar and T (M) over bar of 0.27 +/- 0.02 Angstrom(-1) and 0.30 +/- 0.02 Angstrom(-1), respectively. In the low-temperature phase, a well-resolved core-level splitting is observed for the Sn adatoms. Our data are consistent with a local-bonding representation, when the transition is driven by freezing of dynamic fluctuations of two inequivalent types of Sn adatoms, coexisting at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：48 / 55

页数：8

共 27 条

[1] Dynamical fluctuations as the origin of a surface phase transition in Sn/Ge(III) [J].