Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method

被引:358
作者
Xi, Y [1 ]
Schubert, EF [1 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Future Chips Constellat, Troy, NY 12180 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1795351
中图分类号
O59 [应用物理学];
学科分类号
摘要
A theoretical model for the dependence of the diode forward voltage (V-f) on junction temperature (T-j) is developed. An expression for dV(f)/dT is derived that takes into account all relevant contributions to the temperature dependence of the forward voltage including the intrinsic carrier concentration, the band-gap energy, and the effective density of states. Experimental results on the junction temperature of GaN ultraviolet light-emitting diodes are presented. Excellent agreement between the theoretical and experimental temperature coefficient of the forward voltage (dV(f)/dT) is found. A linear relation between the junction temperature and the forward voltage is found. (C) 2004 American Institute of Physics.
引用
收藏
页码:2163 / 2165
页数:3
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