Low energy ion impact-enhanced growth of cubic boron nitride in a supersonic nitrogen/argon plasma flow

This paper describes the growth and analysis of cubic boron nitride films in a low-density, supersonic nitrogen/argon plasma how into which boron trichloride gas was injected, Both hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) were synthesized using this apparatus. Phase selectivity is obtained by applying a relatively low negative bias voltage to the substrate. All of the films described in this paper were grown on {100} silicon wafers at substrate temperatures varying from 400-700 degrees C. Boron nitride films with greater than 90% cubic phase were successfully synthesized with this method. The films were analyzed using infrared spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. The volumetric percentages of the hexagonal and cubic phases were determined from model fits to the infrared transmission spectra of the films, X-ray photoelectron spectroscopy provided qualitative evidence for the presence and/or lack of sp(2) bonding through the identification of a rr-plasmon feature in the spectra. Infrared reflectance spectra are used to provide insight into the growth mechanisms leading to c-BN formation and have revealed features which are not present in the transmission spectra, specifically the 1305 cm(-1) LO mode of c-BN and the 1610 cm(-1) LO mode of h-BN, The mean ion energies involved with this bias-enhanced chemical vapor deposition (CVD) process are much lower than the ion energies in traditional physical vapor deposition (PVD) processes; however, the ion fluxes (currents) used in this CVD process are at least an order of magnitude higher, resulting in a total momentum transfer to the deposited atoms through ion bombardment that is at least equal to or greater than that reported for many ion-enhanced PVD processes.