GROWTH AND CHARACTERIZATION OF EPITAXIAL CUBIC BORON-NITRIDE FILMS ON SILICON

被引：118

作者：

DOLL, GL ^{[1
]}

SELL, JA ^{[1
]}

TAYLOR, CA ^{[1
]}

CLARKE, R ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT PHYS, ANN ARBOR, MI 48109 USA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.43.6816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth of boron nitride films on (001) faces of silicon using the method of pulsed-excimer-laser ablation. The structure of the deposited films is cubic zinc blende with a lattice constant of 3.619 angstrom. The films were found to be heteroepitaxial with the cubic BN[100] axes parallel to Si[100], as characterized by x-ray diffraction and high-resolution transmission electron microscopy. We find evidence for an unusual 3:2 commensurate lattice matching.

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页码：6816 / 6819

页数：4

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