Growth of high-quality single crystal of 30 at% Yb:YAG and its laser performance

被引：42

作者：

Yang, PZ ^{[1
]}

Deng, PZ

Xu, J

Yin, ZW

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Lab Funct Inorgan Mat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 216卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

30at% Yb : YAG; crystal growth; Czochralski (CZ) method; defects; laser performance;

D O I：

10.1016/S0022-0248(00)00418-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Czochralski crystal growth of 30 at% Yb:YAG was reported. The growth parameters and annealing conditions were studied and the defects in Yb:YAG crystal were also investigated. The uniformity of 30at% Yb:YAG was characterized using the absorption coefficient of Yb:YAG at 940 nm, and the laser performance of 30 at% Yb:YAG thin chip was demonstrated as well. The results show that Yb:YAG crystals with high doping level are potential candidates for compact, efficient thin chip lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：348 / 351

页数：4

共 6 条

[1] HEAT-GENERATION IN ND-YAG AND YB-YAG [J].

FAN, TY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1457-1459

[2] SCALABLE CONCEPT FOR DIODE-PUMPED HIGH-POWER SOLID-STATE LASERS [J].

GIESEN, A ;

HUGEL, H ;

VOSS, A ;

WITTIG, K ;

BRAUCH, U ;

OPOWER, H .

APPLIED PHYSICS B-LASERS AND OPTICS, 1994, 58 (05) :365-372

[3] ROOM-TEMPERATURE DIODE-PUMPED YB-YAG LASER [J].

LACOVARA, P ;

CHOI, HK ;

WANG, CA ;

AGGARWAL, RL ;

FAN, TY .

OPTICS LETTERS, 1991, 16 (14) :1089-1091

[4] GAAS-SI LED PUMPED YB-DOPED YAG LASER [J].

REINBERG, AR ;

RISEBERG, LA ;

BROWN, RM ;

WACKER, RW ;

HOLTON, WC .

APPLIED PHYSICS LETTERS, 1971, 19 (01) :11-&

[5] Defects in YAG:Yb crystals [J].

Yin, HB ;

Deng, PZ ;

Gan, FX .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3825-3828

[6]

杨培志, 1999, 光学学报, V19, P132

← 1 →