HEAT-GENERATION IN ND-YAG AND YB-YAG

被引：502

作者：

FAN, TY

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fractional thermal loading, the ratio of heat generated to absorbed energy, of a 6.5 at. % doped Yb: YAG crystal diode pumped at 0.943 mum has been measured to be <0.11 under conditions of no laser extraction. This quantity ranged from 0.37-0.43 in 1.04 at. % doped Nd:YAG pumped at 0.808 mum. Under conditions of laser extraction, the fractional thermal loading in Yb:YAG is expected to remain nearly constant while that in Nd:YAG at 1.064 mum can be expected to drop to approximately 0.32.

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收藏

页码：1457 / 1459

页数：3

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