Parallel Electron-Hole Bilayer Conductivity from Electronic Interface Reconstruction

被引:100
作者
Pentcheva, R. [1 ]
Huijben, M. [2 ]
Otte, K. [1 ]
Pickett, W. E. [3 ]
Kleibeuker, J. E. [2 ]
Huijben, J. [2 ]
Boschker, H. [2 ]
Kockmann, D. [2 ]
Siemons, W. [4 ]
Koster, G. [2 ]
Zandvliet, H. J. W. [2 ]
Rijnders, G. [2 ]
Blank, D. H. A. [2 ]
Hilgenkamp, H. [2 ]
Brinkman, A. [2 ]
机构
[1] Univ Munich, Dept Earth & Environm Sci, D-80333 Munich, Germany
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
[3] Univ Calif Davis, Dept Phys, Davis, CA 95616 USA
[4] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
关键词
OXIDE HETEROSTRUCTURES; 1ST-PRINCIPLES; INSULATOR; SURFACES; SRTIO3;
D O I
10.1103/PhysRevLett.104.166804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The perovskite SrTiO(3)-LaAlO(3) structure has advanced to a model system to investigate the rich electronic phenomena arising at polar oxide interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO(3) capping layer prevents atomic reconstruction at the LaAlO(3) surface and triggers the electronic reconstruction at a significantly lower LaAlO3 film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.
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页数:4
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