Growth and characterisation of SiC power device material

This paper will focus on growth and characterisation of epitaxial power device material. The paper is organized into three sections: The first section, which will be most emphasized, deals with the ongoing hot-wall Chemical Vapour Deposition (CVD) activity at Linkoping University running partly under the ABR power device program. The second section de scribes briefly the material from the hot-wall CVD program at Cree Research, Inc. The final section is devoted to the High Temperature CVD (HTCVD) growth concept running at Linkoping University. The hot-wall CVD process provides substantial advantages in terms of obtaining low doping and good morphology for the thick layers. The intrinsic background doping is generally n-type in the low 10(14) cm(-3) range. The impurity incorporation of unwanted impurities such as Al, B or Ti is very low. The doping and thickness uniformities, as well as the run-to-run reproducibility are excellent and most importantly, the morphology is very good. The major draw-back with the CVD process in general is the low growth rate which, in general, only amounts to 3 - 5 mu m/hr. Sometimes higher rates may be obtained, however, at the expense of a greater sensitivity to impurity incorporation. The recently proposed HTCVD growth concept suggests a viable alternative to the CVD process due to the tremendous growth rates which may amount to several hundreds of mu m/hr. In fact, the HTCVD process is not only a viable alternative to the CVD process but also a potential candidate for bulk growth.