Weak localization in graphene

被引：63

作者：

Fal'ko, Vladimir I.

Kechedzhi, K.

McCann, E. ^{[1
]}

Altshuler, B. L.

Suzuura, H.

Ando, T.

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Hokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan

[4] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

SOLID STATE COMMUNICATIONS | 2007年 / 143卷 / 1-2期

关键词：

disordered systems; electronic transport; quantum localization;

D O I：

10.1016/j.ssc.2007.03.049

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We review the recently-developed theory of weak localization in monolayer and bilayer graphene. For high-density monolayer graphene and for any-density bilayers, the dominant factor affecting weak localization properties is trigonal warping of graphene bands, which reflects asymmetry of the carrier dispersion with respect to the center of the corresponding valley. The suppression of weak localization by trigonal warping is accompanied by a similar effect caused by random-bond disorder (due to bending of a graphene sheet) and by dislocation/antidislocation pairs. As a result, weak localization in graphene can be observed only in samples with sufficiently strong intervalley scattering, which is reflected by a characteristic form of negative magnetoresistance in graphene-based structures. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：33 / 38

页数：6

共 44 条

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