Effects of surface oxides of SiC on carbon nanotube formation by surface decomposition

被引：20

作者：

Nagano, T ^{[1
]}

Ishikawa, Y ^{[1
]}

Shibata, N ^{[1
]}

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 03期

关键词：

carbon; nanotube; sic; oxide; decomposition;

D O I：

10.1143/JJAP.42.1380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of chemical treatment on carbon nanotube (CNT) formation by surface decomposition of 6H-SiC were investigated. In the case of 6H-SiC cleaned with CH2Cl2, CNTs were formed only on the C-(000 (1) over bar) face. On the other hand, in the case of 6H-SiC etched with HF solution, CNTs were formed on both C-(000 (1) over bar) and Si-(0001) faces. X-ray photoelectron spectroscopy (XPS) analysis detected SiOxCy on the C-(000 (1) over bar) face, and SiO2 and SiOvCw on the Si-(0001) face of SiC cleaned with CH2Cl2. The existence Of SiO2 on the SiC surface prevented CNT formation. The length of CNTs on the Si-(0001) face was about 65% of that on the C-(000 (1) over bar) face. The length of CNTs on the C-(000 (1) over bar) face was not affected by chemical treatment. The difference of CNT length between the C and the Si faces originated from the anisotropy of thermal oxidation.

引用

页码：1380 / 1385

页数：6

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