AES STUDY OF THE SIO2/SIC INTERFACE IN THE OXIDATION OF CVD BETA-SIC

被引：28

作者：

BERJOAN, R ^{[1
]}

RODRIGUEZ, J ^{[1
]}

SIBIEUDE, F ^{[1
]}

机构：

[1] UNIV AUTONOMA BARCELONA,FAC CIENCIAS,DEPT FIS,FIS MAT GRP,E-08193 BARCELONA,SPAIN

来源：

SURFACE SCIENCE | 1992年 / 271卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(92)90879-B

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The SiO2/SiC interface of chemically vapour deposited (CVD) beta-SiC samples oxidized in 1 atm O2 for 10 min at T = 1300-1360-degrees-C was investigated using Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). The interface width is approximately 400 angstrom and it contains a mixture of SiO2, SiC and a silicon suboxide SiOx(x < 2), together with the presence of a carbon excess in this region. Unfortunately, we could not identify the nature and network position of this carbon. Moreover, there is some oxygen in the SiC scale, the Auger peak position of which corresponds to adsorbed oxygen.

引用

页码：237 / 243

页数：7

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