White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties

被引：420

作者：

Park, JK ^{[1
]}

Lim, MA

Kim, CH

Park, HD

Park, JT

Choi, SY

机构：

[1] KRICT, Adv Mat Div, Taejon 305600, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305600, South Korea

[3] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.1544055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have synthesized a Eu2+-activated Sr2SiO4 yellow phosphor and investigated an attempt to develop white light-emitting diodes (LEDs) by combining it with a GaN blue LED chip. Two distinct emission bands from the GaN-based LED and the Sr2SiO4:Eu phosphor are clearly observed at 400 nm and at around 550 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that GaN (400-nm chip)-based Sr2SiO4:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460-nm chip)-based YAG:Ce. (C) 2003 American Institute of Physics.

引用

页码：683 / 685

页数：3

共 9 条

[1] NEW FAMILY OF BISMUTH - PRECIOUS METAL PYROCHLORES [J].