FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes

被引：23

作者：

Ostoja, P

Maccagnani, P

Gazzano, M

Cavallini, M

Kengne, JC

Kshirsagar, R

Biscarini, F

Melucci, M

Zambianchi, M

Barbarella, G

机构：

[1] CNR, Inst Organ Synth & Photoreactiv, I-40129 Bologna, Italy

[2] CNR, Inst Microelect & Microsyst, I-40129 Bologna, Italy

[3] CNR, Inst Nanostruct Mat Studies, I-40129 Bologna, Italy

来源：

SYNTHETIC METALS | 2004年 / 146卷 / 03期

关键词：

FET device; X-ray thin film structure; Atomic Force Microscopy; quinquethiophenes;

D O I：

10.1016/j.synthmet.2004.08.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on thin films deposited in the same conditions are reported and related to the electrical characteristics of the devices. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：243 / 250

页数：8

共 28 条

[1]

Antolini L, 1998, ADV MATER, V10, P382, DOI 10.1002/(SICI)1521-4095(199803)10:5<382::AID-ADMA382>3.0.CO

[2]

2-Y

[3] Scaling behavior of anisotropic organic thin films grown in high vacuum [J].