Nonpolar InxGa1-xN/GaN(1(1)over-bar-00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy -: art. no. 041306

被引：101

作者：

Sun, YJ

Brandt, O

Cronenberg, S

Dhar, S

Grahn, HT

Ploog, KH

Waltereit, P

Speck, JS

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.67.041306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

M-plane In0.1Ga0.9N(1 (1) over bar 00) multiple quantum wells were grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy. The high brightness of the photoluminescence of these multiple quantum wells and the observation of band-edge emission from the barriers are consistent with the expected absence of spontaneous and piezoelectric polarization fields along the growth direction. Despite this fact, the recombination dynamics observed is rather complex and is shown to originate from the superposition of exciton relaxation towards a band of localized states and simultaneous recombination.

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