The origin of optical gain in cubic InGaN grown by molecular beam epitaxy

被引：38

作者：

Holst, JC ^{[1
]}

Hoffmann, A

Rudloff, D

Bertram, F

Riemann, T

Christen, J

Frey, T

As, DJ

Schikora, D

Lischka, K

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-1000 Berlin, Germany

[2] Univ Magdeburg, Inst Expt Phys, D-39106 Magdeburg, Germany

[3] Univ Gesamthsch Paderborn, Fachbereich Phys, D-4790 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期

关键词：

D O I：

10.1063/1.126488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of cubic InGaN samples with varying In content are investigated to provide insight into the processes responsible for optical amplification. The samples were grown by molecular beam epitaxy on GaAs substrates. The structural and optical properties were studied by means of time-resolved and time-integrated photoluminescence spectroscopy and cathodoluminescence microscopy, as well as gain measurements at various temperatures. From these measurements, localized states are proposed to be responsible as recombination mechanism. The cathodoluminescence measurements evidence a direct correlation of the degree of In fluctuation and the efficiency of optical amplification of the samples. (C) 2000 American Institute of Physics. [S0003-6951(00)04720-3].

引用

页码：2832 / 2834

页数：3

共 18 条

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