Characterization of a novel double-gas-jet laser-plasma EUV source

A novel laser plasma EUV source geometry based on a (pulsed) double gas jet system has been characterized for utilization in EUV Lithography. The use of a secondary annular jet of a buffer gas in conjunction with the primary jet of target gas provides a considerable gain in EUV yield of on order of magnitude. The best CE data at 12.8 nm were obtained using xenon as target gas and hydrogen as buffer gas. The plasma source was driven using a short-wavelength KrF laser (0.9 J, 27 ns). Conversion efficiencies (CE) and EUV pulse shapes have been measured using calibrated Mo/Si multilayer mirrors and filtered junction diodes. A pinhole camera, equipped with a back illuminated CCD camera, was used to determine the plasma size in a wavelength range from 6-16 nm.