Sublimation growth of 50mm diameter SiC wafers

被引：16

作者：

Powell, AR ^{[1
]}

Wang, S ^{[1
]}

Fechko, G ^{[1
]}

Brandes, GR ^{[1
]}

机构：

[1] Epitronics, Danbury, CT 06810 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation growth; single crystal expansion; substrate;

D O I：

10.4028/www.scientific.net/MSF.264-268.13

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the growth of 50 mm diameter single crystal SiC wafers and the measurement techniques for characterizing the single crystal area and grain boundary density. Finite element modeling conducted of the thermal profile in the crucible region is described. The results of the modeling were used to modify the sublimation growth equipment, enabling us to increase the single crystal area of the SiC wafers grown at Epitronics. Crest; polariser imaging, preferential defect etching and X-ray diffraction mapping and topography were used to characterize SiC crystal properties.

引用

页码：13 / 16

页数：4

共 11 条

[1] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].