Dielectric function of V2O5 nanocrystalline films by spectroscopic ellipsometry:: Characterization of microstructure

被引：31

作者：

Losurdo, M

Bruno, G

Barreca, D

Tondello, E

机构：

[1] CNR, Ctr Studio Chim Plasma, I-70126 Bari, Italy

[2] Ctr Studio Stabil & Reattiv Composti Coordinaz, CNR, I-35131 Padua, Italy

[3] Dipartimento Chim Inorgan Met Organ & Analit, I-35131 Padua, Italy

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.1289658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry over the photon energy 1.5-5.0 eV is used to derive the dielectric function of V2O5 nanocrystalline films deposited by plasma-enhanced chemical vapor deposition. The dispersion in the optical response is described by a combination of Lorentzian oscillators. The results are obtained from a microstructure-dependent model, which considers the anisotropy of the V2O5 crystallites into the bulk film, as well as the presence of interface and surface roughness layers. The variation of the V2O5 thin-film dielectric function upon film crystallinity, going from pure nanocrystalline to amorphous material, is also investigated. (C) 2000 American Institute of Physics. [S0003-6951(00)04034-1].

引用

页码：1129 / 1131

页数：3

共 11 条

[1] Highly oriented V2O5 nanocrystalline thin films by plasma-enhanced chemical vapor deposition [J].