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Growth and characterisation of Zn1-xBexSe mixed crystals

被引：57
作者：
Firszt, F
Legowski, S
Meczynska, H
Szatkowski, J
Paszkowicz, W
Godwod, K
机构：
[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
II-VI semiconductors; mixed crystals; photoluminescence; microhardness;
D O I：
10.1016/S0022-0248(98)80277-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Beryllium containing, wide-gap II-VI semiconducting compounds may offer a possibility of a significant reduction of the defect propagation in the active region and therefore increasing of II-VI lasers lifetimes due to more covalent bonding and lattice hardening [1] CCh. Verie, in: B. Gil, R.L. Aulombard (Eds.), Semiconductor Heteroepitaxy, Growth, Characterization and Device Applications, World Scientific, Singapore, 1995, p. 73]. Until now, the published papers were concerned thin films [2,3] [F. Fischer, G. Landwehr, Th. Litz, H.J. Lugauer, U. Zehnder, Th. Gerhard, W. Ossau, A. Waag, J. Crystal Growth 175-176 (1997) 532; V. Bousquet, E. Tournie, M. Laugt, P. Vennegue's, J.P. Faurie, Appl. Phys. Lett.70 (1997) 3564] but the fundamental properties of Zn1-xBexSe bulk crystals have not been investigated as yet. This work deals with an experimental study of structural and photoluminescence properties of Zn1-xBexSe mixed crystals as a function of composition. (C) 1998 Elsevier Science B.V. All rights reserved.
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页码：1335 / 1337
页数：3
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