Structure of the carrot defect in 4H-SiC epitaxial layers

Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consists of two intersecting planar faults on prismatic {1 (1) over bar 00} and basal {0001} planes. Both faults are connected by a stair-rod dislocation with Burgers vector 1/n [10 (1) over bar0] with n>3 at the crossover. A Frank-partial dislocation with b=1/12[4 (4) over bar 03] terminates the basal fault. (C) 2005 American Institute of Physics.