New approach of Monte Carlo simulation for low energy electron beam lithography

A new Monte Carlo simulator for low energy electron beam lithography was developed, which includes discrete energy loss models to represent secondary electron generation and straggling effects in energy loss. The models are based on the Moller cross-section, the Vriens cross-section, and the plasmon excitation for inelastic scattering. The results of the new simulator were compared with those of the conventional model based on the screened Rutherford cross-section and the Bethe equation. With the new simulator, straggling effects are shown and more energy is deposited near the resist surface as compared to the conventional model. In addition, the simulated profiles are well matched with experiments.