Fabrication of quantum wires in thermally etched V-grooves by molecular beam epitaxy

被引：9

作者：

Scheiner, D ^{[1
]}

Hanein, Y ^{[1
]}

Heiblum, M ^{[1
]}

机构：

[1] WEIZMANN INST SCI, DEPT CONDENSED MATTER PHYS, BRAUN CTR SUBMICRON RES, IL-76100 REHOVOT, ISRAEL

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 08期

关键词：

D O I：

10.1088/0268-1242/12/8/019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasi-one-dimensional quantum wires have been formed in V-grooves on GaAs substrates. A new fabrication technique based on in situ thermal etching of masked substrates and subsequent overgrowth by molecular beam epitaxy has been developed. The device geometries enabled formation of low-resistance ohmic contacts. Two-terminal magnetoresistance measurements of single-wire devices show transport qualities previously not witnessed in growth on non-planar substrates. Illumination has been used to modulate the carrier density and lateral potential profile of the wires.

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页码：1046 / 1051

页数：6

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