The properties of ferroelectric films at small dimensions

被引：468

作者：

Shaw, TM ^{[1
]}

Trolier-McKinstry, S

McIntyre, PC

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 2000年 / 30卷

关键词：

thin film; piezoelectric; size effect; capacitance; leakage; polarization;

D O I：

10.1146/annurev.matsci.30.1.263

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews the literature on size effects in ferroelectric materials, with an emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect chemistry, electrode interfaces, surface layers, and microstructure in controlling the measured properties of ferroelectric films, as well as the observed deviation from bulk properties are discussed. Examples of the manifestation of size effects in terms of the low and high field dielectric properties, the piezoelectric effect, and the leakage behavior of films are given.

引用

页码：263 / 298

页数：36

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