Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

被引：43

作者：

Eklund, P. ^{[1
]}

Murugaiah, A.

Emmerlich, J.

Czigany, Zs.

Frodelius, J.

Barsoum, M. W.

Hogberg, H.

Hultman, L.

机构：

[1] Linkoping Univ, Thin Film Phys Div, Dept Phys Chem & Biol, IFM, SE-58183 Linkoping, Sweden

[2] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[3] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 01期

基金：

美国国家科学基金会;

关键词：

scanning electron microscopy; transmission electron microscopy; X-ray diffraction; physical vapor deposition processes; carbides; nanomaterials;

D O I：

10.1016/j.jcrysgro.2007.02.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C = 3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：264 / 269

页数：6

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