The hysteresis caused by interface trap and anomalous positive charge in Al/CeO2-SiO2/silicon capacitors

被引：23

作者：

Roh, YH ^{[1
]}

Kim, K

Jung, DG

机构：

[1] Sungkyunkwan Univ, Dept Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

hysteresis; CeO2; SiO2; capacitance; interface trap; anomalous positive charge;

D O I：

10.1143/JJAP.36.L1681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the hysteresis induced by two similar defects located at and near the SiO2-Si interface in the Al/CeO2-SiO2/Si capacitor. We find that the hysteresis are generated directly due to the presence of interface trap and anomalous positive charge. Electrical characteristics of the hysteresis are, however, distinct and are strongly dependent on the type of defects. For example, the hysteresis caused by interface traps disappeared after passivating the Si dangling bonds by a post metallization annealing, while only a bias-temperature annealing causes the reduction of the hysteresis generated by anomalous positive charge. We suggest the mechanisms of the hysteresis generation in the Al/CeO2-SiO2/Si capacitor.

引用

页码：L1681 / L1684

页数：4

共 10 条

[1] Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials [J].

Bengtsson, S ;

Bergh, M ;

Choumas, M ;

Olesen, C ;

Jeppson, KO .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08) :4175-4181

[2] High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures [J].

Fernandez, J ;

Godignon, P ;

Berberich, S ;

Rebollo, J ;

Brezeanu, G ;

Millan, J .

SOLID-STATE ELECTRONICS, 1996, 39 (09) :1359-1364

[3] GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION [J].

FISCHETTI, MV .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2860-2879

[4] THE FABRICATION OF METAL-OXIDE SEMICONDUCTOR TRANSISTORS USING CERIUM DIOXIDE AS A GATE OXIDE MATERIAL [J].

FRANGOUL, AG ;

SUNDARAM, KB ;

WAHID, PF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (01) :181-183

[5] FORMATION OF METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR STRUCTURE WITH A CEO2 BUFFER LAYER [J].

HIRAI, T ;

TERAMOTO, K ;

NISHI, T ;

GOTO, T ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5219-5222

[6] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON [J].

INOUE, T ;

YAMAMOTO, Y ;

KOYAMA, S ;

SUZUKI, S ;

UEDA, Y .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1332-1333

[7]

KLAUSMANN E, 1991, INSTABILITIES SILICO, V2, P306

[8] ANALYSIS OF CHARGE COMPONENTS INDUCED BY FOWLER-NORDHEIM TUNNEL INJECTION IN SILICON-OXIDES PREPARED BY RAPID THERMAL-OXIDATION [J].

ROH, Y ;

TROMBETTA, L ;

HAN, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (03) :1015-1020

[9] POSITIVE CHARGE GENERATION IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS [J].

TROMBETTA, LP ;

FEIGL, FJ ;

ZETO, RJ .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2512-2521

[10] ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111) [J].

TYE, L ;

ELMASRY, NA ;

CHIKYOW, T ;

MCLARTY, P ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3081-3083

← 1 →