THE FABRICATION OF METAL-OXIDE SEMICONDUCTOR TRANSISTORS USING CERIUM DIOXIDE AS A GATE OXIDE MATERIAL

Cerium dioxide was employed as a gate insulator for an enhancement-type n-channel metal-oxide-semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2 as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.