TIME-DEPENDENT, DIELECTRIC-BREAKDOWN CHARACTERISTICS OF TA2O5/SIO2 DOUBLE-LAYERS

被引：4

作者：

NISHIOKA, Y

SHINRIKI, H

MUKAI, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096760

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：872 / 872

页数：1

共 13 条

[1]

Asai S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P6

[2]

Hu C., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P368

[3]

KATO T, 1983, P S VLSI TECH, P86

[4] TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF ULTRA-THIN SILICON-OXIDE [J].

KUSAKA, T ;

OHJI, Y ;

MUKAI, K .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) :61-63

[5] INFLUENCE OF SIO2 AT THE TA2O5/SI INTERFACE ON DIELECTRIC CHARACTERISTICS OF TA2O5 CAPACITORS [J].

NISHIOKA, Y ;

SHINRIKI, H ;

MUKAI, K .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2335-2338

[6] DIELECTRIC CHARACTERISTICS OF DOUBLE-LAYER STRUCTURE OF EXTREMELY THIN TA2O5/SIO2 ON SI [J].

NISHIOKA, Y ;

KIMURA, S ;

SHINRIKI, H ;

MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :410-415

[7] ULTRA-THIN TA2O5 DIELECTRIC FILM FOR HIGH-SPEED BIPOLAR MEMORIES [J].

NISHIOKA, Y ;

HOMMA, N ;

SHINRIKI, H ;

MUKAI, K ;

YAMAGUCHI, K ;

UCHIDA, A ;

HIGETA, K ;

OGIUE, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (09) :1957-1962

[8]

Ohji Y., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P55, DOI 10.1109/IRPS.1987.362155

[9] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY [J].

OHTA, K ;

YAMADA, K ;

SHIMIZU, K ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :368-376

[10] SELECTIVE STUDIES OF CRYSTALLINE TA2O5 FILMS [J].

ROBERTS, S ;

RYAN, J ;

NESBIT, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1405-1410

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