SELECTIVE STUDIES OF CRYSTALLINE TA2O5 FILMS

[1] TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED-CIRCUITS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 127 - 129

[2] COMPUTER-SIMULATION OF SPUTTERING OF CLUSTERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2252 - 2259

[3] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[4] HIGH-VOLTAGE THIN-FILM TRANSISTORS MANUFACTURED WITH PHOTOLITHOGRAPHY AND WITH TA2O5 AS THE GATE OXIDE [J]. THIN SOLID FILMS, 1979, 61 (02) : 259 - 264

[5] CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1570 - 1573

[6] LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2414 - 2418

[7] RELATIVE ION SPUTTERING YIELD MEASUREMENTS BY INTEGRATION OF SECONDARY ION ENERGY-DISTRIBUTION USING A RETARDING-DISPERSIVE ION ENERGY ANALYZER [J]. APPLIED PHYSICS, 1977, 14 (01): : 89 - 97

[8] MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH1

[9] MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH16

[10] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6502 - 6508

[1] TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED-CIRCUITS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (05): : 127 - 129

[2] COMPUTER-SIMULATION OF SPUTTERING OF CLUSTERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2252 - 2259

[3] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[4] HIGH-VOLTAGE THIN-FILM TRANSISTORS MANUFACTURED WITH PHOTOLITHOGRAPHY AND WITH TA2O5 AS THE GATE OXIDE [J]. THIN SOLID FILMS, 1979, 61 (02) : 259 - 264

[5] CHEMICAL VAPOR-DEPOSITION OF TANTALUM PENTOXIDE FILMS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1570 - 1573

[6] LEAKAGE-CURRENT INCREASE IN AMORPHOUS TA2O5 FILMS DUE TO PINHOLE GROWTH DURING ANNEALING BELOW 600-DEGREES-C [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2414 - 2418

[7] RELATIVE ION SPUTTERING YIELD MEASUREMENTS BY INTEGRATION OF SECONDARY ION ENERGY-DISTRIBUTION USING A RETARDING-DISPERSIVE ION ENERGY ANALYZER [J]. APPLIED PHYSICS, 1977, 14 (01): : 89 - 97

[8] MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH1

[9] MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH16

[10] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6502 - 6508