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TANTALUM OXIDE CAPACITORS FOR GAAS MONOLITHIC INTEGRATED-CIRCUITS

被引：15
作者：
ELTA, ME
CHU, A
MAHONEY, LJ
CERRETANI, RT
COURTNEY, WE
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 05期
关键词：
D O I：
10.1109/EDL.1982.25508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：127 / 129
页数：3
相关论文
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :149-154
[2]  
MEAD CA, 1962, PHYS REV, V128
[3]   DESIGN CONSIDERATIONS FOR MONOLITHIC MICROWAVE CIRCUITS [J].
PUCEL, RA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (06) :513-534
[4]   IMPROVED PROPERTIES OF TAN-TA2O5NX-AL CAPACITORS [J].
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JAWALEKAR, SR .
THIN SOLID FILMS, 1979, 64 (01) :71-76
[5]   ELECTRICAL-PROPERTIES OF RESISTIVE AND DIELECTRIC THIN-FILMS PREPARED BY REACTIVE SPUTTERING FROM A TANTALUM-TITANIUM COMPOSITE TARGET [J].
UMEZAWA, T ;
YAJIMA, S ;
MATSUMOTO, K .
THIN SOLID FILMS, 1978, 52 (01) :69-75
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