IMPROVED PROPERTIES OF TAN-TA2O5NX-AL CAPACITORS

被引:6
作者
REDDY, PK
JAWALEKAR, SR
机构
[1] Department of Electrical Engineering, Indian Institute of Technology, Bombay
关键词
D O I
10.1016/0040-6090(79)90546-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The properties of TaNTa2O5NxAl capacitors formed by the anodization of sputtered TaN films were investigated. The changes in capacitance, dielectric loss, temperature coefficient of capacitance and leakage currents were studied for samples containing different concentrations of nitrogen. The results are compared with data reported by other investigators and a suitable nitrogen doping level is suggested for the fabrication of capacitors that satisfy the requirements of hybrid integrated circuits. © 1979.
引用
收藏
页码:71 / 76
页数:6
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