学术探索
学术期刊
新闻热点
数据分析
智能评审

Thermal stability of nickel silicide on silicon on insulator (SOI) material

被引：6
作者：
Cafra, B
Alberti, A
Ottaviano, L
Bongiorno, C
Mannino, G
Kammler, T
Feudel, T
机构：
[1] CNR, IMM Sez Catania, I-95121 Catania, Italy
[2] AMD Saxony LLC & Co KG, Dresden, Germany
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷
关键词：
nickel silicide; silicidation; thermal stability; spike annealing; silicon on insulator;
D O I：
10.1016/j.mseb.2004.07.020
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The growth of Ni monosilicide layers on As doped silicon on insulator (SOI) substrates has been studied in the temperature range between 450 and 950degreesC. Sheet resistance measurements (R-s) and X-ray diffraction (XRD) analyses have shown a remarkable improvement of the thermal stability mainly due to the use of spike annealing processes. TEM analyses have indicated that NiSi film maintains a columnar structure and a flat interface with the substrate as the temperature increases up to 900degreesC. Above this temperature, morphological and structural changes like agglomeration phenomena, hole formation and nucleation of the silicon rich phase, have caused an abrupt increase of the sheet resistance of the layer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：228 / 231
页数：4
相关论文
共 13 条
[1]   Frontiers of silicon-on-insulator [J].
Celler, GK ;
Cristoloveanu, S .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :4955-4978
[2]   Thickness scaling issues of Ni silicide [J].
Chamirian, O ;
Kittl, JA ;
Lauwers, A ;
Richard, O ;
van Dal, M ;
Maex, K .
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) :201-208
[3]   Thermal expansion of the isostructural PtSi and NiSi: Negative expansion coefficient in NiSi and stress effects in thin films [J].
Detavernier, C ;
Lavoie, C ;
d'Heurle, FM .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2510-2515
[4]  
GAMBINO JP, 1999, MATER CHEM PHYS, V52, P96
[5]   Ni- and Co-based silicides for advanced CMOS applications [J].
Kittl, JA ;
Lauwers, A ;
Chamirian, O ;
Van Dal, M ;
Akheyar, A ;
De Potter, M ;
Lindsay, R ;
Maex, K .
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) :158-165
[6]   Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies [J].
Lauwers, A ;
Steegen, A ;
de Potter, M ;
Lindsay, R ;
Satta, A ;
Bender, H ;
Maex, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2026-2037
[7]   Towards implementation of a nickel silicide process for CMOS technologies [J].
Lavoie, C ;
d'Heurle, FM ;
Detavernier, C ;
Cabral, C .
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) :144-157
[8]   Improvement of the thermal stability of NiSi films by using a thin Pt interlayer [J].
Liu, JF ;
Chen, HB ;
Feng, JY ;
Zhu, J .
APPLIED PHYSICS LETTERS, 2000, 77 (14) :2177-2179
[9]   Effect of interlayer on thermal stability of nickel silicide [J].
Maa, JS ;
Ono, Y ;
Tweet, DJ ;
Zhang, FY ;
Hsu, ST .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1595-1599
[10]   Refinement of the structure of nickel monosilicide crystals [J].
Rabadanov, MK ;
Ataev, MB .
INORGANIC MATERIALS, 2002, 38 (02) :120-123
12