In situ x-ray reflectivity study of the oxidation kinetics of liquid gallium and the liquid alloy Ga0.93Hg0.07

被引：49

作者：

Plech, A ^{[1
]}

Klemradt, U ^{[1
]}

Metzger, H ^{[1
]}

Peisl, J ^{[1
]}

机构：

[1] Univ Munich, Sekt Phys, D-80539 Munich, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 05期

关键词：

D O I：

10.1088/0953-8984/10/5/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low-temperature oxidation kinetics of liquid Ga and the liquid alloy Ga0.93Hg0.07 has been investigated by means of in situ x-ray specular reflectivity. A combination of angle-dispersive and energy-dispersive measurements was used to obtain a time resolution of 20 minutes with a sealed-tube reflectometer. allowing us ro follow the growth of a natural oxide layer for 1 to 170 hours following preparation of a fresh surface. Oxide layer thicknesses between 10 and 30 Angstrom were measured for Ga at 103 degrees C and the liquid alloy at 83 degrees C, 107 degrees C and 122 degrees C. The oxidation was found to follow a logarithmic growth law in all cases.

引用

页码：971 / 982

页数：12

共 37 条

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