Analysis of line-edge roughness in resist patterns and its transferability as origins of device performance degradation and variation

被引：35

作者：

Yamaguchi, A

Fukuda, H

Kawada, H

Iizumi, T

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi Hightechnol Corp, Katsuta, Ibaraki 3128504, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2003年 / 16卷 / 03期

关键词：

line-edge roughness; dry etching; CD-SEM; measurement parameter; device performance;

D O I：

10.2494/photopolymer.16.387

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

General property of line-edge roughness (LER) in resist pattern and its transferability to under-lying layer were investigated. Longer-period components were found to have larger amplitudes in a resist pattern and to remain after dry etching. In addition, long-period LER strongly affects a transistor performance. Long-period LER in resist patterns, therefore, is as important as short-period LER. Metrology of LER was reconsidered to evaluate the both LER properly, and a guideline for choosing measurement parameters was proposed from a viewpoint of device performance estimation.

引用

页码：387 / 393

页数：7

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