Stepped structure on the {0001} facet plane of α-SiC

被引：16

作者：

Ohtani, N ^{[1
]}

Katsuno, M ^{[1
]}

Takahashi, J ^{[1
]}

Yashiro, H ^{[1
]}

Kanaya, M ^{[1
]}

机构：

[1] Nippon Steel Corp, Adv Technol Res Labs, Sagamihara, Kanagawa 229, Japan

来源：

SURFACE SCIENCE | 1998年 / 398卷 / 03期

关键词：

atomic force microscopy; silicon carbide; single crystal surface; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(98)80031-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface topography of the {0001} facet of as-grown 6H and 4H-SiC boules was observed ex-situ by atomic force microscopy (AFM). Peculiar stepped structures of SiC{0001} to the growth face polarity and the polytype were detected. Height steps equal to the c-lattice parameter (1.5 nm) were observed to be dominant on the 6H-SiC(0001)Si surface. They were very regularly arranged, i.e. straight and almost equally spaced. On the other hand, meandering macrosteps of height more than 10 nm were observed on the 6H-SiC(000(1)over-bar)C and the 4H-SiC(000(1)over-bar)C surfaces. Based on the results, the mechanism of formation of these surface morphologies is discussed. (C) 1998 Elsevier Science B.V.

引用

页码：L303 / L307

页数：5

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