STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES

被引：131

作者：

KIMOTO, T

ITOH, A

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyoto University

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.114127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step bunching and terrace widening on 6H- and 4H-SiC epilayers on vicinal {0001} faces have been studied with atomic force microscopy (AFM) and transmission electron microscopy (TEM). Macroscopically, hill-and-valley structures are observed on off-oriented (0001)Si faces, whereas surfaces are rather flat on off-oriented (0001̄)C faces. High-resolution TEM analysis revealed that 3 bilayer-height steps are dominant on 6H-SiC and 4 bilayer-height steps on 4H-SiC. The distribution of step height and terrace width are also investigated.© 1995 American Institute of Physics.

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页码：3645 / 3647

页数：3

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