GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

被引：67

作者：

Harmand, J. C.

Tchernycheva, M.

Patriarche, G.

Travers, L.

Glas, F.

Cirlin, G.

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Physicotech Ctr Sci & Educ, St Petersburg 195220, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

基金：

俄罗斯基础研究基金会;

关键词：

crystal structure; nanostructures; liquid phase epitaxy; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.11.106

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaAs nanowires was investigated by molecular beam epitaxy assisted by the pre-deposition of An on a clean GaAs (1 1 1)B surface. Before growth was started, we observed the formation of nanoparticles consisting of AuGa alloys. The transition between their solid and liquid phases was evidenced by in situ reflection high energy electron diffraction. Regular nanowires were obtained only for growth temperatures above the melting temperature of the metallic particle which was observed near 400 degrees C. The kinetics of this nanowire growth is discussed. (c) 2006 Elsevier B.V. All rights reserved.

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页码：853 / 856

页数：4

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