Silicon nanowhiskers grown on ⟨111⟩Si substrates by molecular-beam epitaxy

被引:283
作者
Schubert, L
Werner, P
Zakharov, ND
Gerth, G
Kolb, FM
Long, L
Gösele, U
Tan, TY
机构
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Saale, Germany
[2] Duke Univ, Pratt Sch Engn, Durham, NC 27708 USA
关键词
D O I
10.1063/1.1762701
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon nanowhiskers in the diameter range of 70 to 200 nm were grown on <111>-oriented silicon substrates by molecular-beam epitaxy. Assuming the so-called "vapor-liquid-solid" (VLS) growth process to operate, we initiated the growth by using small clusters of gold at the silicon interface as seeds. The in situ generation of the Au clusters as well as the growth parameters of the whiskers are discussed. The experimentally observed radius dependence of the growth velocity of the nanowhiskers is opposite to what is known for VLS growth based on chemical vapor deposition and can be explained by an ad-atom diffusion on the surface of the whiskers. (C) 2004 American Institute of Physics.
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收藏
页码:4968 / 4970
页数:3
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