Maskless selective area molecular beam epitaxy of semiconductors and metals using atomic step networks on silicon

被引:7
作者
Finnie, P [1 ]
Homma, Y [1 ]
机构
[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
selective area epitaxy; step patterning; patterned growth; molecular beam epitaxy;
D O I
10.1016/S0022-0248(98)01420-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Step-patterned substrates of vicinal Si(111) were used for the selective growth of a variety of materials, both semiconductor (GaAs and Ge) and metal (Au and Ag) Step patterning was performed by etching substrates photolithographically, and annealing them. Subsequent growth by molecular beam epitaxy was observed by in situ ultra-high vacuum scanning: electron microscopy. Materials grew preferentially on the prepared step bands either by a desorption mechanism or by a diffusion mechanism, depending on the temperature. The growth of silver was different, although the initial monolayer was also selective. This growth technique can be applied to a small region or an entire wafer. Growth areas fan be several microns wide, or, in principle, can be of nanometer scale (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:604 / 609
页数:6
相关论文
共 7 条
  • [1] ATOMIC-STRUCTURE OF THE ARSENIC-SATURATED SI(111) SURFACE
    COPEL, M
    TROMP, RM
    KOHLER, UK
    [J]. PHYSICAL REVIEW B, 1988, 37 (18): : 10756 - 10763
  • [2] Atomic step networks as selective epitaxial templates
    Finnie, P
    Homma, Y
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (07) : 827 - 829
  • [3] Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si(III) surfaces
    Homma, Y
    Aizawa, N
    Ogino, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B): : L241 - L243
  • [4] Sublimation of the Si(111) surface in ultrahigh vacuum
    Homma, Y
    Hibino, H
    Ogino, T
    Aizawa, N
    [J]. PHYSICAL REVIEW B, 1997, 55 (16): : 10237 - 10240
  • [5] LIFSHITS VG, 1994, SURFACE PHASES SILIC
  • [6] Step arrangement design and nanostructure self-organization on Si surfaces
    Ogino, T
    Hibino, H
    Homma, Y
    [J]. APPLIED SURFACE SCIENCE, 1997, 117 : 642 - 651
  • [7] SELECTIVE-AREA EPITAXY AND ETCHING BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1016 - 1022