SELECTIVE-AREA EPITAXY AND ETCHING BY CHEMICAL BEAM EPITAXY

This paper reviews the unique characteristics of selective-area epitaxy by chemical beam epitaxy (CBE) using either shadow masks or dielectric masks. The beam nature permits the use of shadow masks. The high-vacuum environment results in no residual deposits on the dielectric masks. By injecting a gaseous etching beam, e.g. PCl3, directly into the CBE growth chamber, selective reactive chemical beam etching of InP was also demonstrated. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE, etching at high substrate temperatures, and improved morphology.