ETCHING OF INP BY HCL IN AN OMVPE REACTOR

被引：39

作者：

CANEAU, C

BHAT, R

KOZA, M

HAYES, JR

ESAGUI, R

机构：

[1] Bellcore, Red Bank

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90457-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated etching of (100) InP by HCl gas inside on OMVPE reactor, at 76 Torr, and at temperatures of 580 at 625-degrees-C. Proper choice of etching parameters led to very good (at 625-degrees-C) or fair (at 580-degrees-C) morphologies for etched depths of up to 3-mu-m. With SiO2 stripes or stripe openings on the (100) surface, ridges or V grooves were obtained by etching, limited by very smooth (111)A or (111)B walls.

引用

页码：203 / 208

页数：6

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