VAPOR-PHASE ETCHING OF INP USING ANHYDROUS HCL AND PH3 GAS

被引：8

作者：

PAK, K ^{[1
]}

KOIDE, Y ^{[1
]}

IMAI, K ^{[1
]}

YOSHIDA, A ^{[1
]}

NAKAMURA, T ^{[1
]}

YASUDA, Y ^{[1
]}

NISHINAGA, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 10期

关键词：

D O I：

10.1149/1.2108370

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2204 / 2205

页数：2

共 6 条

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BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) :1378-1382

[2] PRESERVATION OF INP SUBSTRATES IN VAPOR-PHASE EPITAXY - THE EFFECT OF EXCESS PH3 [J].

DIGIUSEPPE, MA ;

CHIN, AK ;

ERMANIS, F ;

PETICOLAS, LJ .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (02) :311-315

[3]

Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10

[4] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

FARROW, RFC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) :2436-2448

[5] THERMAL-DEGRADATION OF INP AND ITS CONTROL IN LPE GROWTH [J].

LUM, WY ;

CLAWSON, AR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5296-5301

[6] FACTORS INFLUENCING THE GROWTH OF GA0.47 IN0.53 AS ON INP SUBSTRATES USING THE METALORGANIC PROCESS [J].

WHITELEY, JS ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :383-388

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