Effects of grain cluster size on coercivity and giant magnetoresistance of NiFe/Cu/CoFe/Cu/NiFe pseudo spin valves

被引:12
作者
Bae, S [1 ]
Li, JG
Judy, JH
Zurn, S
机构
[1] Univ Minnesota, MINT, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[2] Integrated Magetoelect Co, Minneapolis, MN 55406 USA
关键词
D O I
10.1063/1.1328053
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of grain cluster size on the coercivity (H-c) and giant magnetoresistance in NiFe/Cu/CoFe/Cu/NiFe pseudo spin valves for magnetic random access memory devices has been investigated as a function of the Ar sputtering gas pressure which affects the interfacial roughness and magnetic coercivity differences. It is found that the grain cluster size induced by the differences in the kinetic energy of the sputtered adatoms at different gas pressure plays a crucial role in determining the H-c of NiFe/CoFe bilayers and magnetic interlayer coupling in Si/NiFe/Cu/CoFe/Cu/NiFe pseudo spin valves. (C) 2000 American Institute of Physics. [S0003-6951(00)05047-6].
引用
收藏
页码:3435 / 3437
页数:3
相关论文
共 9 条
[1]  
BAE S, IN PRESS IEEE T MAGN
[2]  
Bae S.J., UNPUB
[3]  
CULLITY BD, 1972, INTRO MAGNETIC MAT, P383
[4]   MAGNETORESISTIVE MEMORY TECHNOLOGY [J].
DAUGHTON, JM .
THIN SOLID FILMS, 1992, 216 (01) :162-168
[5]   Development of unusual magnetic anisotropy in Co-based trilayers [J].
Kim, HJ ;
Lee, BI ;
Joo, SK .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3995-3997
[6]  
Ohring M., 1992, MAT SCI THIN FILMS, P195
[7]   High density submicron magnetoresistive random access memory (invited) [J].
Tehrani, S ;
Chen, E ;
Durlam, M ;
DeHerrera, M ;
Slaughter, JM ;
Shi, J ;
Kerszykowski, G .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5822-5827
[8]  
Vook R. W., 1982, International Metals Reviews, V27, P209
[9]   Magnetic anisotropy of Co on Cu(1 1 17) [J].
Wulfhekel, W ;
Knappmann, S ;
Oepen, HP .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) :988-992