Low-mass PECVD oxynitride gas chromatographic columns

被引:51
作者
Agah, Masoud [1 ]
Wise, Kensall D.
机构
[1] Virginia Polytech Inst & State Univ, Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
[2] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
buried channel; complimentary metal-oxide-semiconductor (CMOS) compatible; micro gas chromatography (GC); microelectromechanical systems (MEMS); separation column; silicon oxynitride (SiON);
D O I
10.1109/JMEMS.2007.893515
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the realization of low-power micro gas chromatography columns for portable gas analysis systems. The columns are fabricated using complimentary metal-xide-semiconductor-compatible buried-channel plasma-enhanced chemical vapor deposition oxynitride films that have nearly zero stress at room temperature, high deposition rate (similar to 1 mu m/min), high etch rate selectivity (similar to 1:80), low thermal conductivity (< 5 W/m degrees C), and low thermal stress (< 140 kPa/degrees C). The buried channel process utilizes these films to form 25-cm-long 65-mu m-ID semicircular columns on a 6-mm-square chip. With more than 5000 theoretical plates, these columns separate multicomponent gas mixtures with performance comparable to that of commercial fused silica capillary columns. The columns are capable of multisecond analyses when integrated with low-dead-volume injectors and dissipate less than 10 mW at 150 degrees C in vacuum.
引用
收藏
页码:853 / 860
页数:8
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