Fabrication and characterization of the conic diamond field emission arrays with gated structure

In this study, we successfully fabricate conic diamond field emitter array devices by applying an IC process capable of forming a metal-insulator-semiconductor (MIS) diode structure. The conic diamonds are selectively deposited and, ultimately, grow inside of the electric gates. In addition, the field emission current is measured when applying +1000V voltage on the anode in which the applied gate voltage is varied from 0 to 50 volts. Experimental results indicate that the threshold voltage of this device is about 12 V, and the field emission current is about 40 mu A when the gate voltage is 30 V. Furthermore, current-voltage (I-V) characterization of the electrical properties demonstrates that the reason fur the change of the threshold voltage of conic diamond held emission arrays (FEAs) fabricated under different CH4 concentration may be attributed to the diamond tip radius.