HETEROEPITAXIAL GROWTH OF DIAMOND ON C-BN IN A MICROWAVE PLASMA

被引：19

作者：

MAEDA, H

MASUDA, S

KUSAKABE, K

MOROOKA, S

机构：

[1] Department of Chemical Science and Technology, Kyushu University 6-10-1, Higashi-ku, Fukuoka, 812, Hakozaki

来源：

关键词：

D O I：

10.1016/0925-9635(94)90192-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond was synthesized heteroepitaxially on single-crystal cubic boron nitride (c-BN) by microwave plasma-assisted chemical vapour deposition from a gas mixture of methane and hydrogen. Diamond films formed were characterized by Raman spectroscopy, and their morphology and microstructure were investigated by scanning electron microscopy. The heteroepitaxial nucleation and growth of diamond were confirmed on the (100) and (111) planes of c-BN. The boron-terminating (111) plane was most efficient for the formation of a textured diamond film. The epitaxy on the (100) plane was achieved in a narrow range of reaction conditions, and no oriented deposits were observed on the nitrogen-terminating (111) plane.

引用

页码：398 / 402

页数：5

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