EPITAXIAL-GROWTH OF DIAMOND THIN-FILMS ON FOREIGN SUBSTRATES

被引:26
作者
INUZUKA, T
KOIZUMI, S
SUZUKI, K
机构
[1] AOYAMA GAKUIN UNIV, DEPT ELECT ENGN & ELECTR, SETAGAYA KU, TOKYO 157, JAPAN
[2] KYOEI PLAST CO, SAITAMA 368, JAPAN
关键词
D O I
10.1016/0925-9635(92)90020-O
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond thin films have been grown on several kinds of single crystal substrates by using DC plasma chemical vapor deposition. As an example of epitaxy of diamond on a foreign substrate, the growth processes of diamond thin films on cubic boron nitride (cBN) surfaces are observed by scanning electron microscopy. It is found that diamond thin films can be growth epitaxially on a boron plane of cBN {111} and, on a nitrogen plane of cBN {111}; diamond cannot be deposited except at the defect parts of the surfaces. The possibility of epitaxial growth of diamond thin films on foreign substrates is discussed briefly. © 1992.
引用
收藏
页码:175 / 179
页数:5
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